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P R E L IMINA R Y P R ODUC T INF OR MA T ION
B IP OL AR ANAL OG INT E G R AT E D C IR C UIT
P C 8232T 5N
S iG e: C L OW NOIS E AMP L IF IE R F OR G P S
DE S C R IP T ION
T he P C 8232T 5N is a s ilicon germanium carbon (S iG e:C ) monolithic integrated circuit des igned as low nois e amplifier for G P S . T his device exhibits low nois e figure and high power gain characteris tics , s o this IC can improve the s ens itivity of G P S receiver. In addition, the P C 8232T 5N which is included output matching circuit contributes to reduce external components and s ys tem s ize. T he package is 6-pin plas tic T S O N (T hin S mall O ut-line Non-leaded) s uitable for s urface mount. T his IC is manufactured us ing our UHS 4 (Ultra High S peed P roces s ) S iG e:C bipolar proces s .
F E AT UR E S
* Low nois e * High gain * Low current cons umption * B uilt-in power-s ave function * High-dens ity s urface mounting * Included output matching circuit * Included very robus t bandgap regulator (S mall VC C and T A dependence) * Included protection circuits for E S D : 6-pin plas tic T S O N package (1.5 1.5 0.37 mm) : NF = 0.95 dB T Y P . @ fin = 1575 MHz : G P = 17 dB T Y P . @ fin = 1575 MHz : IC C = 3.0 mA T Y P . @ VC C = 3.0V
AP P L IC AT ION
* Low nois e amplifier for G P S
OR DE R ING INF OR MAT ION
P art Number P C 8232T 5N-E 2 Order Number P C 8232T 5N-E 2-A P ackage 6-pin plas tic T S ON (P b-F ree) Marking 6L S upplying F orm 8mm wide embos s ed taping P in 1, 6 face the perforation s ide of the tape Qty 3 kpcs /reel
R emark
T o order evaluation s amples , contact your nearby s ales office. P art number for s ample order: P C 8232T 5N
C aution O bs erve prec autions when handling bec aus e thes e devic es are s ens itive elec tros tatic dis c harge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Document No. (4th E dition) Date P ublis hed Augus t 2006 C P (N)
P C 8232T 5N
P IN C ONNE C T IONS
( T op View )
( B ottom View )
P in No. 1
P in Name V cc G ND INP UT P ower S ave OUT P UT V cc G ND
1 2 3
6 5 4
6 5 4
1 2 3
2 3 4 5 6 E XP OS E D P AD
INT E R NAL B L OC K DIAG R AM
V cc 1 GND 2 2
B ias B ias
6 6

V cc OUT P UT P ower S ave
5 5
INP UT 3
4
2
P C 8232T 5N
AB S OL UT E MAXIMUM R AT ING S
P arameter S upply V oltage P ower-S aving V oltage T otal P ower Dis s ipation Operating Ambient T emperature S torage T emperature Input P ower S ymbol VCC VPS P tot TA T s tg P in T A = + 25C T A = + 25C T A = + 85C Note T es t C onditions R atings 4.0 4.0 150 40 to + 85 55 to + 150 + 10 Unit V V mW C C dB m
Note Mounted on double-s ided copper-clad 50
50
1.6 mm epoxy glas s P W B
R E C OMME NDE D OP E R AT ING R ANG E
P arameter S upply V oltage Operating Ambient T emperature P ower S ave T urn-on V oltage P ower S ave T urn-off V oltage S ymbol VCC TA V P S on V P S off MIN. 2.5 40 1.6 0 T YP . 3.0 + 25 MAX. 3.3 + 85 V cc 0.4 Unit V C V V
E L E C T R IC AL C HAR AC T E R IS T IC S ( T A = +25 C , V C C = V P S = 3.0 V , fin = 1575MHz, unles s otherwis e s pecified )
P arameter C ircuit C urrent S ymbol ICC No s ignal T es t C onditions (V P S = 3.0 V ) MIN. 2.3 15 7 10 fin1=1574MHz, fin2=1575MHz T YP . 3.0 17 0.95 10 20 40 8 21 MAX. 4.1 1 19 1.25 Unit mA A dB dB dB dB dB dB m dB m
At P ower-S aving Mode (V P S = 0 V ) P ower G ain Nois e F igure Input R eturn Los s Output R eturn Los s Is olation Input 3rd Order Dis tortion I Intercept P oint G ain 1 dB C ompres s ion Intput P ower P in (1 dB ) GP NF R Lin R Lout IS L IIP 3 P in=-35dB m
3
P C 8232T 5N
T E S T C IR C UIT S
Vcc
1000pF
1 2
6 5
1000pF
OUTP UT
1pF Vps
100pF 5.6nH
3
4
P AC K AG E DIME NS IONS 6-P IN P L AS T IC T S ON (UNIT : mm)
4
P C 8232T 5N
NOT E ON C OR R E C T US E
(1) O bs erve precautions for handling becaus e of electro-s tatic s ens itive devices . (2) F orm a ground pattern as widely as pos s ible to minimize ground impedance (to prevent undes ired os cillation). All the ground pins mus t be connected together with wide ground pattern to decreas e impedance difference. (3) T he bypas s capacitor s hould be attached to VCC line. (4) Do not s upply DC voltage to INP UT pin.
R E C OMME NDE D S OL DE R ING C ONDIT IONS
T his product s hould be s oldered and mounted under the following recommended conditions . methods and conditions other than thos e recommended below, contact your nearby s ales office.
S oldering Method Infrared R eflow T ime at peak temperature T ime at temperature of 220 C or higher P reheating time at 120 to 180 C Maximum number of reflow proces s es Maximum chlorine content of ros in flux (% mas s ) W ave S oldering P eak temperature (molten s older temperature) T ime at peak temperature P reheating temperature (package s urface temperature) Maximum number of flow proces s es Maximum chlorine content of ros in flux (% mas s ) P artial Heating P eak temperature (pin temperature) S oldering time (per s ide of device) Maximum chlorine content of ros in flux (% mas s ) S oldering C onditions P eak temperature (package s urface temperature) : 260 C or below : 10 s econds or les s : 60 s econds or les s : 120 30 s econds : 3 times : 0.2%(W t.) or below : 260 C or below : 10 s econds or les s : 120 C or below : 1 time : 0.2%(W t.) or below : 350 C or below : 3 s econds or les s : 0.2%(W t.) or below HS 350 W S 260 C ondition S ymbol IR 260
F or s oldering
C aution Do not us e different s oldering methods together (exc ept for partial heating).
5
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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -AZ (*)
-A Not Detected
Not Detected Not Detected Not Detected Not Detected Not Detected
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